PicoTech offers Mercury Probe CV Characterization tools by Semilab.
The Mercury-contact C-V metrology systems are designed for precise dielectrics characterization, doping measurement and resistivity profiling of epitaxial layer structures and bare substrates. The wafer is placed on an ultra-flat chuck, and the front-side is contacted with a droplet of Mercury to allow the creation of a MOS-like device or a Schottky contact in a fast yet highly repeatable way.
Semi-automatic and fully automatic versions of the machine allow to work with 2″-12″ wafers with the mapping function. For production version of the machine extended process capabilities are available.
Applications:
- Carrier concentration and resistivity (in case of Silicon) profiling for bulk semiconductors and epitaxial semiconductor layers
- Complete C-V characterization of high-k and low-k dielectrics on semiconductors (MOS or MIS junctions)
Measured parameters:
- Dopant concentration and resistivity profile for Si and SiC EPI characterization
- Dielectric thickness, dielectric constant (optical thickness is needed from SE measurement)
- Flatband voltage
- Interface trap density calculated from GV (DIT)
- Breakdown voltage, Dielectric leakage, Charge to breakdown, TBBD, Breakdown field
- Pinch-off voltage for HEMTs
- 2DEG sheet charge for HEMTs
