PicoTech offers a wide range of Fully-Automatic Cluster Physical Vapor Deposition (PVD) solutions for Production and R&D: PVD, highly ionized PVD, Soft Etch and PECVD process technologies.
These physical vapor deposition tools are suitable for substrates of 2”, 3”, 4”, 5”, 6”, 200mm and 300mm wafers and custom shape substrates with automated substrate loading. The main highlight is extremely high uniformity of coatings together with high throughput.
Typical applications are:
1. BAW/SAW — Extremely uniform and smooth piezoelectric AlN layers with high degree of crystalline orientation at controlled levels of stress for resonators, reflectors and electrodes, e.g. AlN, AlScN, ZnO, Ti-Mo, Ti-Pt, Al, Al alloys, W, SiO2 , Si3 N4 , PZT.
2. WAFER LEVEL PACKAGING — UBM/RDL for WLP production solutions, e.g. Ti-Cu, TiW-Cu, TiW-Au, TiW(N)-Au,TiNiV-Cu, Al-NiV-Cu at throughputs up to 60 wafers/hour — Integrated Passives: TaN, SiCr resistors, Cu coils, NiFe, CZT, laminated magnetic cores, BST/ PZT capacitors — 3D/TSV (Through Silicon Via) with AR up to 15 — Organic/mold substrates (Fanout, InFo) with batch degasser and low temperature processing — Thin wafer processing on carriers or TAIKO wafers
3. BACKSIDE METALLIZATION & THIN WAFER PROCESSING — Wafer handling design assures defect-free front side — Bare wafers, thin wafers on carriers or TAIKO wafers < 50μm — Stress control, e.g Al-Ti-NiV-Ag, Ti- NiV-Ag/ Au, Cr-Ni-Ag/Au, AuAs-Ag-NiV-AuGe — Complete solution with “in-situ” pre-etch and contact anneal at 45 wafers/hour
4. LED — Lattice matching AlN layer (NanoSmooth™) between wafer and GaN — Metal deposition for barrier, contacts and solder materials — Passivation layers e.g. SiNx , SiOx Ny
5. WIRELESS — Active compound semiconductor devices — Low temperature backside via metallization of contact layers & barriers e.g. TiWAu, AuGe, Ti/TiW(N)-Au, TiW-Al, stress optimized Cr-Ni- Au, Pt, AuZn, AuSn
6. THIN FILM HEADS — Dielectric layers, Al2 O3 , AlN, SiO2 , SiC, a-C — Conductive seed layers, Cr, Cu, Ta, TaN, W, Ru — NiFe, CoFe, CoNiFe with magnetic alignment
7. MEMS — System flexibility enables full process support for niche applications including sensors and biomedical applications, e.g. Ni, Pt, NiFe, NiCr, SiCr, TaN, ITO, TiOx Ny and dielectrics SiC, AlN, SiO2 , Al2 O3 , TiO2 , TiC, Ta2 O5 , Si3 N4 , PZT
8. INTEGRATED PASSIVE DEVICES — Resistors with low TCR, e.g. TaN, NiCr, SiCr — Laminated magnetic cores for couplers, coils and inductors
9. IC INTERCONNECTS — Multi-level metallizations including barrier layers, liners, plugs, planarization and ARC, e.g.Ti-TiN, Ti-Al alloy, TiN — Throughput up to 50 wafers/hour (Aligndegas- etch- 30nm Ti- 500nm Al- 150nm ARC TiN- cool)
